Prof. Kim`s R.P.

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  • 164 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, (Just accepted), 2018-05
  • 163 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, (Just accepted), 2018-05
  • 162 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04 PDF
  • 161 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04 PDF
  • 160 S. K. Kim, J.-P. Shim, D.-M. Guem, J. Kim, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, S. Kim "Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1862-1868, DOI: 10.1109/TED.2018.2810304, 2018-03 , 2018-03 PDF
  • 159 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design" IEEE Transactions on Electron Devices, vol. 65, no. 3, pp. 1002-1008, DOI: 10.1109/TED.2018.2797208, 2018-03 PDF
  • 158 J. Jang†, S. Choi†, J. Kim, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, D. H. Kim, H.-S. Mo (†These authors equally contributed to this work) "Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors" Solid State Electronics, vol. 140, pp. 109-114, DOI: 10.1016/j.sse.2017.10.027, 2018-02 PDF
  • 157 J. T. Jang, D. Ko, G. Ahn, H. R. Yu, H. Jung, Y. S. Kim, C. Yoon S. Lee, B. H. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications" Solid State Electronics, vol. 140, pp. 139-143, DOI: 10.1016/j.sse.2017.10.032, 2018-02 PDF
  • 156 J. T. Jang†, D. Ko†, S. Choi, H. Kang, J.-Y. Kim, H. R. Yu, G. Ahn, H. Jung, J. Rhee, S.-J. Choi, D. M. Kim, D. H. Kim(†These authors equally contributed to this work) "Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices" Solid State Electronics, vol. 140, pp. 115-121, DOI: 10.1016/j.sse.2017.10.028, 2018-02 PDF
  • 155 H. Jung, S. choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim* "Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors" Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10 PDF
  • 154 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim* "The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress" Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10 PDF
  • 153 Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi* "Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces" Applied physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10 PDF
  • 152 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim "Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques" IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09 PDF
  • 151 J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work) "Transparent, flexible strain sensor based on a solution-processed carbon nanotube network" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07 PDF
  • 150 J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors) "Determination of individual contact interfaces in carbon nanotube network-based transistors" Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07 PDF
  • 149 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07 PDF
  • 148 H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work) "Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05 PDF
  • 147 S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim "Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05 PDF
  • 146 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05 PDF
  • 145 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05 PDF