Prof. Kim`s R.P.

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  • 92 J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output" IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12 PDF
  • 91 Y. Kim, S. Kim, W. Kim, M. Bae, H. K. Jeong, D. Kong, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part II Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2699-2706, 2012-10 PDF
  • 90 Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jeong, H. Kim, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2689-2698, 2012-10 PDF
  • 89 E. Hong, D. Yun, H. Bae, H. Choi, W. H. Lee, M. Uhm, H. Seo, J. Lee, J. Jang, D. H. Kim, and D. M. Kim "Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs" IEEE Electron Device Letters, vol. 33, no. 7, pp. 922-924, 2012-07 PDF
  • 88 H. Bae, S. Jun, C. Jo, H. Choi, J. Lee, Y. H. Kim, S. Hwang, H. K. Jeong, I. Hur, W. Kim, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Modified Conductance Method for Extraction of Subgap Density-of-States in a-IGZO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 8, pp.. 1138-1140, 2012-08 PDF
  • 87 H. Bae, I. Hur, J. S. Shin, D. Yun, E. Hong, K.-D. Jung, M.-S. Park, S. Choi, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs" IEEE Electron Device Letters, vol. 33, no 4, 2012-04 PDF
  • 86 J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03 PDF
  • 85 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03 PDF
  • 84 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02 PDF
  • 83 S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01 PDF
  • 82 D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01 PDF
  • 81 J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11 PDF
  • 80 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, D. H. Kim and D. M. Kim "A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time" Semiconductor Science and Technology, vol. 26, pp. 095025, 2011-08 PDF
  • 79 Y. W. Jeon, I. Hur, Y. Kim, M. Bae, H.-K. Jung, D. Kong, W. Kim, J. Kim, J. Jang, D. M. Kim, and D. H. Kim "Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A" Journal of Semiconductor Technology and Science, vol. 11, no. 3, 2011-09 PDF
  • 78 Y. Kim, M. Bae, D. Kong, H.-K. Jung, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 474~477, 2011-08 PDF
  • 77 D. Kong, H.-K. Jung, Y. Kim, M. Bae, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim and D. H. Kim "Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 505-510, 2011-08 PDF
  • 76 D. H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H.-I. Kwon "AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter" Japanese J. Appl. Phys., vol. 50, p. 090202, 2011-09 PDF
  • 75 D. Kong, H.-K. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, D. M. Kim, and D. H. Kim "The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Lett., vol. 32, no. 10, pp. 1388-1390, 2011-10 PDF
  • 74 J.-H. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, and D. M. Kim "Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11 PDF
  • 73 M. Bae, Y. Kim, D. Kong, H.-K. Jung, W. Kim, J. Kim, I. Hur, D. M. Kim, and D. H. Kim "Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11 PDF