Prof. Kim`s R.P.

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  • 26 H. T. Shin, K. H. Kim, K. S. Kim, I. C. Nam, J. B. Choi, J. U. Lee, S. W. Kim, H. T. Kim, T. E. Kim, H. S. Park, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Characterization of Interface States at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 44, no. 6, pp. 1485-1489, 2004-06 PDF
  • 25 M. S. Kim, I. C. Nam, H. T. Kim, H. T. Shin, T. E. Kim, H. S. Park, K. S. Kim, K. H. Kim, J. B. Choi, K. S. Min, D. J. Kim, D. W. Kang, and D. M. Kim "Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems" IEEE Electron Device Lett., vol. 25, no. 2, pp. 101-103, 2004-02 PDF
  • 24 M. S. Kim, H. T. Kim, S. S. Chi, T. E. Kim, H. T. Shin, H. S. Park, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Distribution of Interface States in MOS Systems Extracted by the Subthreshold Current in MOSFETs under Optical Illumination" J. of the Korean Phys. Soc., vol. 43, no. 5, pp. 878-883, 2003-11 PDF
  • 23 S. S. Chi, H. T. Kim, M. S. Kim, T. E. Kim, H. T. Shin, H. S. Park, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Photonic Gated-Diode Method for Extracting the Energy-Dependent and Spatial Distributions of Interface States in MOSFETs" J. of the Korean Phys. Soc., vol. 43, no. 5, pp. 884-891, 2003-11 PDF
  • 22 S. S. Chi, H. T. Kim, M. S. Kim, T. E. Kim, H. T. Shin, H. S. Park, K. H. Kim, K. S. Kim, I. C. Nam, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Gated-Diode Method for Extracting the Distributions of Interface States in MOSFETs" Electronics Lett., vol. 39, no. 24, pp. 1761-1763, 2003-11 PDF
  • 21 D. M. Kim, H. C. Kim, and H. T. Kim "Modeling and Extraction of Gate Bias-Dependent Parasitic Source and Drain Resistances in MOSFET's" Solid-State Electronics, vol. 47, no. 10, pp. 1707-1712, 2003-12 PDF
  • 20 D. M. Kim, S. J. Song, H. T. Kim, S. H. Song, D. J. Kim, K. S. Min, and D. W. Kang "Deep-Depletion High-Frequency Capacitance-Voltage Responses under Photonic Excitation and Distribution of Interface States in MOS Capacitors" IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1131-1134, 2003-04 PDF
  • 19 S. D. Cho, H. T. Kim, and D. M. Kim "Physical Mechanisms on the Abnormal Gate Leakage Currents in Pseudomorphic High Electron Mobility Transistors" IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1148-1152, 2003-04 PDF
  • 18 H. J. Kim, I. Han, W. J. Choi, Y. J. Park, W. J. Cho, J. I. Lee, D. M. Kim, and J. Zimmermann "Analytic Model for Photo-Response of p-Channel MODFET's" J. of the Korean Phys. Soc., vol. 42, no. supp. issue. 2, pp. s642-s646, 2003-02 PDF
  • 17 S. D. Cho, H. T. Kim, S. J. Song, S. S. Chi, M. S. Kim, W. S. Chang, H. J. Kang, H. T. Shin, T. E. Kim, D. J. Kim, and D. M. Kim "A Physics-Based Continuous Charge-Sheet MOSFET Model using a Balanced Bulk Charge Sharing Method" J. of the Korean Phys. Soc., vol. 42, no. 2, pp. 214-223, 2003-02 PDF
  • 16 S.-H. Seo, S.-W. Kim , J.-U. Lee, G.-C. Kang, K.-S. Roh, K.-Y. Kim , S.-Y. Lee, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, K.-C. Jeon, D. M. Kim, D. H. Kim , H. Shin, J. D. Lee and B-G. Park "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, issue 6, pp. 844-848, 2008-01 PDF
  • 15 S. J. Song, H. T. Kim, S. S. Chi, M. S. Kim, W. S. Chang, S. D. Cho, H. T. Shin, T. E. Kim, H. J. Kang, D. J. Kim, and D. M. Kim "Characterization of Interface States in MOS Systems using Photonic High-Frequency Capacitance-Voltage Responses" J. of the Korean Phys. Soc., vol. 41, no. 6, pp. 892-895, 2002-12 PDF
  • 14 S. D. Cho, S. J. Song, H. C. Kim, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim, and D. M. Kim "Comprehensive Characterization and Modeling of Abnormal Gate Leakage Current in Pseudomorphic HEMTs" J. of the Korean Phys. Soc., vol. 40, no. 4, pp. 577-583, 2002-04 PDF
  • 13 D. M. Kim, H. C. Kim, and H. T. Kim "Photonic High-Frequency Capacitance-Voltage Characterization of Interface States in Metal-Oxide-Semiconductor Capacitors" IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 526-528, 2002-03 PDF
  • 12 H. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim, and D. M. Kim "Photonic Characterization of Capacitance-Voltage Characteristics in MOS Capacitors and Current-Voltage Characteristics in MOSFETs" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 64-67, 2002-01 PDF
  • 11 Y. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, H. C. Kim, S. K. Kim, S. S. Chi, K. H. Baek, G. M. Lim, D. J. Kim, and D. M. Kim "Extraction of Device Model Parameters in MOSFETs Combining C-V and I-V Characteristics" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 60-63, 2002-01 PDF
  • 10 K. H. Baek, G. M. Lim, S. D. Cho, Y. C. Kim, H. C. Kim, S. K. Kim, and D. M. Kim "Modeling of Submicron Si-MOSFET's for Microwave Applications with Unique Extraction of Small-Signal Characteristic Parameters" J. of the Korean Phys. Soc., vol. 36, no. 6, pp. 915-922, 2000-12 PDF
  • 9 G. M. Lim, Y. C. Kim, D. J. Kim, Y. W. Park, and D. M. Kim "Additional Resistance Method for Extraction of Separated Nonlinear Parasitic Resistances and Effective Mobility in MOSFETs" Electronics Lett., vol. 36, no. 14, pp. 1233-1234, 2000-07 PDF
  • 8 D. M. Kim, H. J. Kim, J. I. Lee, and Y. J. Lee "Comparison of Photoresponsive Drain Conduction and Gate Leakage in N-channel Pseudomorphic HEMT and MESFET under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 6, pp. 264-267, 2000-06 PDF
  • 7 D. M. Kim, S. H. Song, K. H. Baek, D. J. Kim, and H. J. Kim "Microwave Characteristics of a Pseudomorphic High Electron Mobility Transistor under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 3, pp. 93-96, 2000-03 PDF