Prof. Kim`s R.P.

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  • 19 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park "Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 170-175, 2002-12 PDF
  • 18 S.-H. Lee, D. H. Kim, K. R. Kim, J. D. Lee, B.-G. Park, Y.-J. Gu, G.-Y. Yang, and J.-T. Kong "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12 PDF
  • 17 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang and D. Ahn "Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters" Journal of The Korean Physical Society, vol. 41, no. 4, pp. 505-508, 2002-10 PDF
  • 16 K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, and B.-G. Park "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body" IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10 PDF
  • 15 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire" J. Vac. Sci. Technol. B., vol. 20, Issues 4, pp. 1410-1418, 2002-07 PDF
  • 14 B. H. Choi, S. H. Son, K. H. Cho, S.W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, B. G. Park "Direct observation of excited states in double quantum dot silicon single electron transistor" Microelectronic Engineering, vol. 63, Issues 1-3, pp. 129-133, 2002-07 PDF
  • 13 K.-H. Chung, S.-K. Sung, D. H. Kim, W. Y. Choi, C. A. Lee, J. D. Lee and B.-G. Park "Nanoscale Multi-Line Patterning Using Sidewall Structure" Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, Part 1, no. 6B, 2002-06 PDF
  • 12 B. H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B. G. Park "Double-dot-like charge transport through a small size silicon single electron transistor" Physica E, vol. 13, pp. 946-949, 2002-03 PDF
  • 11 D. H. Kim, K. R. Kim, S. K. Sung, J. D. Lee, and B.-G. Park "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor" IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05 PDF
  • 10 S.-K. Sung, D. H. Kim, J.-S. Sim, K. R. Kim, Y. K. Lee, J. D. Lee, S. D. Chae, B. M. Kim, and B.-G. Park "Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology" Jpn. J. Appl. Phys., vol. 41, Part 1, no. 4B, pp. 2606-2610, 2002-04 PDF
  • 9 K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, and D. Ahn "Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire" Jpn. J. Appl. Phys., vol. 41, Part 1, no. 4B, pp. 2574-2577, 2002-04 PDF
  • 8 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, D. Ahn "Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic" IEEE Transactions on Electron Devices, vol. 49, nO. 4, pp. 627-635, 2002-04 PDF
  • 7 S.-K. Sung, J.-S. Sim, D. H. Kim, J. D. Lee, and B.-G. Park "Nanoscale-Wire Patterning Using Side-Wall and Quantum Dot Memory Device Fabrication" Journal of the Korean Physical Society, vol. 40, no. 1, pp. 128~131, 2002-01 PDF
  • 6 K. R. Kim, D. H. Kim, J. D. Lee, and B.-G. Park "Characteristics of Silicon-On-Insulator Single-Electron Transistors with Electrically Induced Tunnel Barriers" Journal of the Korean Physical Society, vol. 40, no. 1, pp. 140~144, 2002-01 PDF
  • 5 D. H. Kim, S.-K. Sung, J. S. Sim, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, and D. Ahn "Single-electron transistor based on silicon-on-insulator quantum wire fabricated by a side-wall patterning method" Appl. Phys. Lett., vol. 79, no. 23, pp. 3812~3814, 2001-12 PDF
  • 4 D. H. Kim, J. D. Lee, and B.-G. Park "Room Temperature Coulomb Oscillation of a Single Electron Switch with an Ectrically Formed Quantum Dot and Its Modeling" Jpn. J. Appl. Phys., vol. 39, pp. 2329~2333, 2000-04 PDF
  • 3 T.-S. Yoon, J.-Y. Kwon, D.-H. Lee, K.-B. Kim, S.-H. Min, D.-H.-Chae, D. H. Kim, J. D. Lee, and B.-G. Park "High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2" J. of Applied Physics., vol. 87, no. 5, pp2449~2453, 2000-03 PDF
  • 2 D. H. Chae, D. H. Kim, Y. J. Lee, C. H. Kwak, J. D. Lee, B. G. Park, T. S. Yoon, J. Y. Kwon, K. B. Kim, K. R. Kim, N. J. Park, H. S. Yoon and S. J. Jeong "Nanocrystal Memory Cell Using High-Density Si 0.73Ge 0.27 Quantum Dot Array" J. Korean Physical Society, vol. 35, pp. S995~S998, 1999-12 PDF
  • 1 D. H. Kim, D. H. Chae, J. D. Lee, B. G. Park, and H.-G. Lee "Silicon Single Electron Transistors with a Dual Gate Structure" J. Korean Physical Society, vol. 33, pp. s278-s282, 1998-11 PDF
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