Prof. Kim`s R.P.

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  • 44 S. R. Park, K. Y. Kim, C. Choi, K.-J. Song, J.-H. Park, K. Jeon, S. Lee, T. Y. Kim, J. E. Lee, S, Lee, S. Park, J. Jang, D. M. Kim and D. H. Kim "Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors : Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET" Journal of Korean Physical Society, vol. 54, no. 5, pp. 1854-1861, 2009-05 PDF
  • 43 K. Jeon, S. Lee, J.-H. Park ,C. Choi, K.-J. Song, S. R. Park, T. Y. Kim, J. E. Lee, S. Park, S. Lee, J. Jang, D. H. Kim, and D. M. Kim "Optical Charge Pumping Method for Extracting the Energy Level of Interface States in Program/Erase Cycled SONOS Flash Memory Cell and Its Program Time Dependence" Journal of Korean Physical Society, vol. 54, no 5, pp. 1862-1867, 2009-05 PDF
  • 42 K. S. Roh, S. Park, K.-J. Song, J.-H. Park, S. Lee, C. Choi, K. Jeon, S. R. Park, T. Y. Kim, J. E. Lee, S. Lee, J. Jang, D. H. Kim, and D. M. Kim "Lateral Trapped Charge Profiling Based on the Extraction of Flat Band Voltage by using the Optical Substrate Current in Charge Trapping Flash Memory Cells" Journal of Korean Physical Society, vol. 54, no. 5, pp. 1848-1853, 2009-05 PDF
  • 41 J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim "Extraction of Density of States in Amorphous GaInZnO Thin Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics" IEEE Electron Device Letters., vol. 29, pp.1292-1295, 2008-12 PDF
  • 40 K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J.-H. Park, S. Lee, D. M. Kim, and D. H. Kim "Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics" Appl. Phys. Lett., vol. 93, pp. 182102, 2008-11 PDF
  • 39 S. Kang, D. H. Kim, I.-H. Park, J.-H. Kim, J.-E. Lee, J. D. Lee, and B.-G. Park "Self-Aligned Dual-Gate Single-Electron Transistors" Japanese Journal of Applied Physics, vol. 47, no. 4, pp. 3118-3122, 2008-04 PDF
  • 38 S. H. Seo, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Lee, K.-J. Song, C. M. Choi, S. R. Park, K. Jeon, J.-H. Park, B.-G. Park, J. D. Lee, D. M. Kim, and D. H. Kim "Dynamic Bias Temperature Instability-like Behaviors under Fowler-Nordheim Program/Erase Stress in Nanoscale Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memories" Appl. Phys. Lett., vol. 92, pp. 133508-133510, 2008-04 PDF
  • 37 S. W. Kim, K. S. Roh, S. H. Seo, K. Y. Kim, G. C. Kang, S. Lee, C. M. Choi, S. R. Park, J. H. Park, K. C. Chun, K. J. Song, D. H. Kim and D. M. Kim "Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation" Microelectronics Reliability, vol 48, Issue 3, pp. 382-388, 2008-03 PDF
  • 36 S. H. Seo, S. W. Kim, J.-U. Lee, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Lee, C. M. Choi, K.-J. Song, S. R. Park, J.-H. Park, K. Jeon, D. M. Kim, and D. H. Kim "Investigation of Channel Width Dependence of CHEI Program / HHI Erase Cycling Behavior in Nitride-based Charge-Trapping Flash (CTF) Memory Devices" Journal of Korean Physical Society, vol. 52, pp. 481-486, 2008-02 PDF
  • 35 J.-G. Lee, D. H. Kim, J. G. Lee, D. M. Kim and K.-S. Min "A compact HSPICE macromodel of resistive RAM" IEICE Electron. Express, vol. 4, no. 19, pp. 600-605, 2007-10 PDF
  • 34 D. M. Kim, D. H. Kim, S. Y. Lee "Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes" Solid-State Electronics, vol. 51, pp. 865-869, 2007-01 PDF
  • 33 C. H. Lee, S. W. Kim, J. U. Lee, S. H. Seo, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Y. Lee, D. M. Kim, and D. H. Kim "Design of a robust analog-to-digital converter based on complementary SET/CMOS hybrid amplifier" IEEE Trans. Nanotechnology, vol. 6, no. 6, 2007-11 PDF
  • 32 J. U. Lee, K. S. Roh, G. C. Kang, S. H. Seo, K. Y. Kim, S. Lee, K. J. Song, C. M. Choi, S. R. Park, J. H. Park, K. C. Jeon, D. H. Kim, and D. M. Kim "Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices" Appl. Phys. Lett., vol. 91, ,pp. 223511, 2007-11 PDF
  • 31 S. Lee, K.-C. Jeon, J.-U. Lee, S.-W. Kim, S.-H. Seo, K.-S. Roh, G.-C. Kang, K.-Y. Kim, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, D.-M. Kim, and D.-H. Kim "Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories" J. of the Korean Phys. Soc., vol. 51, no. 6, pp. 2063-2068, 2007-12 PDF
  • 30 D. H. Kim "Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors" Physica E, vol. 33, pp. 273-279, 2006-03 PDF
  • 29 J. B. Choi, S. H. Seo, J. U. Lee, G. C. Kang, S. W. Kim, K. S. Roh, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K. Rhee, and D. M. Kim "Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10 PDF
  • 28 S. W. Kim, J. U. Lee, G. C. Kang, K. S. Roh, S. H. Seo, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K Rhee, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10 PDF
  • 27 Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn "Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET" Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03 PDF
  • 26 K. R. Kim, D. H. Kim, K.-W. Song, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, and B. G. Park "Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor" IEEE Electron Device Letters, vol. 25, no. 6, pp. 439-441, 2004-06 PDF
  • 25 K. R. Kim, K.-W. Song, D. H. Kim, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, B.-G. Park "Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region" Jpn. J. Appl. Phys., vol. 43, pp. 2031-2035, Part 1, no. 4B, 2004-04 PDF