Prof. Choi`s R.P.

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  • 135 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, (Just accepted), 2018-05
  • 134 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, (Just accepted), 2018-05
  • 133 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04 PDF
  • 132 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04 PDF
  • 131 S. K. Kim, J.-P. Shim, D.-M. Guem, J. Kim, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, S. Kim "Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1862-1868, DOI: 10.1109/TED.2018.2810304, 2018-03 , 2018-03 PDF
  • 130 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design" IEEE Transactions on Electron Devices, vol. 65, no. 3, pp. 1002-1008, DOI: 10.1109/TED.2018.2797208, 2018-03 PDF
  • 129 J. Jang†, S. Choi†, J. Kim, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, D. H. Kim, H.-S. Mo (†These authors equally contributed to this work) " Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors" Solid State Electronics, vol. 140, pp. 109-114, DOI: 10.1016/j.sse.2017.10.027, 2018-02 PDF
  • 128 J. T. Jang, D. Ko, G. Ahn, H. R. Yu, H. Jung, Y. S. Kim, C. Yoon S. Lee, B. H. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications" Solid State Electronics, vol. 140, pp. 139-143, DOI: 10.1016/j.sse.2017.10.032, 2018-02 PDF
  • 127 J. T. Jang†, D. Ko†, S. Choi, H. Kang, J.-Y. Kim, H. R. Yu, G. Ahn, H. Jung, J. Rhee, S.-J. Choi, D. M. Kim, D. H. Kim(†These authors equally contributed to this work) "Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices" Solid State Electronics, vol. 140, pp. 115-121, DOI: 10.1016/j.sse.2017.10.028, 2018-02 PDF
  • 126 S. Kim†, M. Lim†, Y. Kim†, H.-D. Kim, S.-J. Choi* (These authors equally contributed to this work) "Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network" Scientific Reports, vol. 8, p. 2638, DOI:10.1038/s41598-018-21057-x, 2018-02 PDF
  • 125 H. Jung, S. choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim* "Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors" Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10 PDF
  • 124 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim* "The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress" Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10 PDF
  • 123 Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi* "Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces" Applied physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10 PDF
  • 122 J.-H. Ahn, S.-J Choi, M. Im, S. Kim, C.-H. Kim, J.-Y. Kim, T. J. Park, S. Y. Lee, Y.-K. Choi* "Charge and dielectric effects of biomolecules on electrical characteristics of nanowire FET biosensors" Applied physics Letters, vol. 111, no. 11, p. 3701, DOI: 10.1063/1.5003106, 2017-09 PDF
  • 121 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim "Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques" IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09 PDF
  • 120 J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work) "Transparent, flexible strain sensor based on a solution-processed carbon nanotube network" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07 PDF
  • 119 J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors) "Determination of individual contact interfaces in carbon nanotube network-based transistors" Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07 PDF
  • 118 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07 PDF
  • 117 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05 PDF
  • 116 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05 PDF