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  • 69 D. Kong, S. Lee, Y. Jeon, S. Kim, Y. Kim, H. Jung, M. Bae, D. M. Kim and D. H. Kim "Electrical stress-induced instability of amorphous InGaZnO thin-film transistors under bipolar AC stress" The 17th Korean Conference on Semiconductors, 2010-02
  • 68 S. Lee, Y. W. Jeon, J. Jang, J. S. Sin, H. J. Kim, H. Y. Bae, D. H. Yun, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-bit SONOS-Type Non-Volatile Memory Cell with T-Gate and I-Shaped FinFET Structure and Low Current Sense Amplifier" The 17th Korean Conference on Semiconductors, 2010-
  • 67 S. Lee, Y. Jeon, S. Kim, M.-K. Bae, D. Kong, Y. Kim, H. K. Jung, D. M. Kim, and D. H. Kim "Characterization of the C-V Response of Amorphous Indium Gallium Zinc Oxide TFTs" 17th Korean Conference on Semiconductors, 2010-
  • 66 S. Lee, S. Park, S. Kim, Y. Jeon, D. Kong , M.-K. Bae, H. K. Jung, Y. S. Kim, D. M. Kim, and D. H. Kim "Subgap Density-of-States Extraction of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Using Multiple Frequency C-V Characteristics" The 17th Korean Conference on Semiconductors, 2010-
  • 65 Y.‐K. Choi, M. Jang, and S.‐J. Choi "High speed Flash Memory by a Dopant‐Segregated Schottky‐Barrier MOSFET" 2009 Bulletin of the Korean Physical Society, pp. 191, 2009-10
  • 64 S.‐J. Choi, J.‐W. Han, S. Kim, D.‐I. Moon, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Performance Breakthrough in NOR Flash Memory with Dopant‐Segregated Schottky‐Barrier (DSSB) SONOS Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 222‐223, 2009-06
  • 63 S.‐J. Choi, S.‐W. Ryu, J.‐W. Han, S. Kim, and Y.‐K. Choi "A Novel Capacitorless DRAM Operated by Gate‐Induced Drain‐Leakage (GIDL) for Improved Sensing Window and Low Power Operation" Proceedings of the 16th Korean Conference on Semiconductors, pp. 62-63, 2009-02
  • 62 J.‐W. Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, K. J. Choi, B. J. Cho, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Gate‐All‐Around Silicon Nanowire MOSFETs on Bulk Substrate" Proceedings of the 16th Korean Conference on Semiconductors, 2009-02
  • 61 S. Park , S.-C. Baek, Y. J. Seo, H.-M. An, T. G. Kim, D. M. Kim, and D. H. Kim "Comparative Study on Dynamic Bias Temperature Instability-like Behavior with Program/Erase Cycles in MANOS and SONOS Memories" The 16th Korean Conference on Semiconductors, 2009-
  • 60 S. R. Park, C. Choi, D. M. Kim, and D. H. Kim "Comparative Study on Program Speed and Retention Characteristics in Advanced Nitride-Based Charge Trap Flash (CTF) Memories in Perspective of Vertical Location of Charge Traps" The 16th Korean Conference on Semiconductors, 2009-
  • 59 J. Lee, C. Choi, S. Park, J. Jang, I.-Y. Chung, C.-J. Kim, D. M. Kim, and D. H. Kim "Comparative Study on Ultra-Energy-Efficient Full Adders Based on Single-Electron Transistors" 16th Korean Conference on Semiconductors, 2009-
  • 58 C. Choi, S. R. Park, J. Jang, J.-S. Lee, K.-S. Min, J. G. Lee, D. M. Kim, and D. H. Kim "Comparative Study on Program/Erase Speed, Retention, and Process Margin for Manufacturability of High Performance Metal Nanocrystal Memories" The 16th Korean Conference on Semiconductors, 2009-
  • 57 J.-H. Park, K. Jeon, S. Lee, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. M. Kim, and D. H. Kim "Density of States-Based Model of Amorphous GaInZnO Thin Film Transistors by Using Optical Charge Pumping Technique" The 16th Korean Conference on Semiconductors, 2009-
  • 56 T. Y. Kim, S. R. Park, S.-C. Baek, Y. W. Jeon, Y. J. Seo, H.-M. An, T. G. Kim, D. H. Kim, and D. M. Kim "Extraction of Trap Energy Distribution in Nitride-based MANOS Charge Trap Flash Memory by Combining the Iteration Method with Optical C-V Measurement" The 16th Korean Conference on Semiconductors, 2009-
  • 55 J. C. Park, S. W. Kim, S. I. Kim, H. Yin, J. H. Hur, S. H. Jeon, S. H. Park, I. H. Song, Y. S. Park, U. I. Chung, M. K. Ryu, S. Lee, S. Kim, Y. Jeon, D. M. Kim, D. H. Kim, K.-W. Kwon and C. J. Kim "High performance amorphous oxide thin film transistors with self-aligned top-gate structure" IEDM Tech. Dig., pp. 191-194, 2009-
  • 54 S. Lee, K. Jeon, J.-H. Park, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. H. Kim, and D. M. Kim "Modeling and Characterization of Metal-Semiconductor-Metal-based Source-Drain Contacts for Design and Robust Implementation of a -GaInZnO TFTs" The 16th Korean Conference on Semiconductors, 2009-
  • 53 S.‐J. Choi, J.‐W. Han, S. Kim, D.‐H. Kim, M. Jang, J.‐H. Yang, J. S. Kim, K. H. Kim, J. S. Oh, M. H. Song, G. S. Lee, Y. C. Park, J. W. Kim, and Y.‐K. Choi "High Speed Flash Memory and 1T‐DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS for Multi‐functional SoC applications" IEEE International Electron Device Meeting (IEDM), 6.5, pp. 223‐226, 2008-12
  • 52 J.‐W. Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, K. J. Choi, B. J. Cho, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Energy Band Engineered Unified‐RAM (URAM) for Multi‐Functioning 1T‐DRAM and NVM" IEEE International Electron Device Meeting (IEDM), 6.6, pp. 227‐230, 2008-12
  • 51 S.‐J. Choi, J.‐W. Han, S. Kim, C.‐J. Choi, M. Jang, and Y.‐K. Choi "Current Flow Mechanism in Schottky‐Barrier MOSFETs and Application to the 1T‐DRAM" Solid State Devices and Materials (SSDM), pp. 226‐227, 2008-09
  • 50 J.‐Woo Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, K. J. Choi, B. J. Cho, J. S. Kim, K. H. Kim, J. S. Oh, M. H. Song, G. S. Lee, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Band offset FinFET‐Based URAM (Unfied‐RAM) Built on SiC for Multi‐Functioning NVM and Capacitorless DRAM" Symposium on VLSI Technology Digest of Technical Paper (VLSI), 20.3, pp. 200‐201, 2008-06